j ziiz ij-^ioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJH11017 description ? high dc current gain- : hfe = 400(min)@lc=-10a ? collector-emitter sustaining voltage- : vceo(sus)=-150v(min) ? low collector-emitter saturation voltage- : vce(sat) = -2.5v(max)@ lc= -10a = -4.0v(max)@lc=-15a ? complement to type mjh11018 applications ? designed for general purpose amplifiers ,low frequency switching and motor control applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current- continuous collector power dissipation @tc=25c junction temperature storage temperature range value -150 -150 -5 -15 -30 -0.5 150 150 -65-150 unit v v v a a a w 'c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 0.83 unit c/w 1 1 1 i 2 3 t 4? iw*- 2. coll 3. emit to-3pf ?2 s * j ? *^ ? ? ector per j package . t r i_ it 4 1 t ' h 1 f k * ? & ? -*-y-*- / ~^ r* :, ?.; dim a b c d e f g h j k l n q r s u y c -? -*-s mm win 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 ' ';. / ,' ' ?-. ?, u nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp darlington power transistor MJH11017 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vee(sat) vbe(on) icev iceo iebo hpe-1 hfe-2 cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance conditions lc= -100ma, ib=0 ic=-10a,ib=-0,1a lc=-15a,lb=-0.15a lc=-15a,lb=-0.15a lc=-10a;vce=-5v vcev=150v;vbe(off)=1.5v vcev=1 50v;vbe(0frr 1 .5v;tc=1 50 c vce= -75v, ib=0 veb= -5v; lc=0 lc=-10a;vce=-5v lc=-15a;vce=-5v le=0;vcb=-10v,f=0.1mhz min -150 400 100 typ. max -2.5 -4.0 -3.8 -2.8 -0.5 -5.0 -1 -2 15000 600 unit v v v v v ma ma ma pf switching times td tr ts tf delay time rise time storage time fall time lc=-10a,vcc=-100v; !?? n 1 a. \/-^, ? c\/- ib -u. l/\ vbe(off) -ov, duty cycled. 0% 75 0.5 2.7 2.5 ns u s ij s |l s
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